The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Mar. 02, 2011
Vassil Antonov, Boise, ID (US);
Jennifer K. Sigman, Boise, ID (US);
Vishwanath Bhat, Boise, ID (US);
Matthew N. Rocklein, Boise, ID (US);
Bhaskar Srinivasan, Boise, ID (US);
Chris Carlson, Nampa, ID (US);
Vassil Antonov, Boise, ID (US);
Jennifer K. Sigman, Boise, ID (US);
Vishwanath Bhat, Boise, ID (US);
Matthew N. Rocklein, Boise, ID (US);
Bhaskar Srinivasan, Boise, ID (US);
Chris Carlson, Nampa, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.