The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Sep. 19, 2012
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Zhe Song, Boise, ID (US);
Jennifer K. Sigman, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 49/02 (2006.01); H01G 4/008 (2006.01); H01L 27/108 (2006.01); H01G 4/33 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01G 4/008 (2013.01); H01G 4/33 (2013.01); H01L 21/02189 (2013.01); H01L 21/02271 (2013.01); H01L 21/02362 (2013.01); H01L 27/10852 (2013.01);
Abstract
A method of forming a semiconductor structure. The method comprises forming a high-k dielectric material, forming a continuous interfacial material over the high-k dielectric material, and forming a conductive material over the continuous interfacial material. Additional methods and semiconductor structures are also disclosed.