Jenn-Tarng Lin

Title: Innovations by Jenn-Tarng Lin

Introduction

Jenn-Tarng Lin is a prominent inventor based in Hsinchu, Taiwan. She has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. Her work focuses on enhancing the effectiveness of barrier layers in semiconductor devices, which is crucial for improving device performance and reliability.

Latest Patents

One of her latest patents is titled "Diffusion barrier enhancement for sub-micron aluminum-silicon contacts." This invention outlines methods for enhancing barrier layers that prevent interaction between aluminum interconnect metallizations and underlying silicon device regions. One method involves using dual layers of titanium nitride on titanium disilicide. The first titanium nitride layer is created through rapid thermal annealing of an underlying titanium layer in a nitrogen-containing environment, which also forms the titanium disilicide layer. The second titanium nitride layer is deposited using reactive sputtering. Another method for creating an enhanced barrier layer includes reactively sputtering titanium nitride directly onto an underlying titanium layer. Rapid thermal annealing in an ammonia and oxygen environment results in an oxygen-containing titanium nitride barrier layer, which effectively prevents aluminum penetration compared to counterparts fabricated without these processes.

Another notable patent is related to a "Barrier/glue layer on polysilicon layer." This method involves forming a barrier/glue layer above the polysilicon layer of a MOS transistor gate. The process begins with providing a semiconductor substrate and forming a gate oxide layer above it. A polysilicon layer is then formed over the gate oxide layer, followed by the deposition of a titanium layer and a titanium nitride layer. This bi-layer increases adhesive strength with a subsequently deposited tungsten silicide layer and prevents peeling. The titanium nitride layer also acts as a barrier for fluorine atoms, ensuring the integrity of the gate oxide layer.

Career Highlights

Jenn-Tarng Lin is currently employed at United Microelectronics Corporation, where she continues to innovate in semiconductor technology. Her work has been instrumental in advancing the field and improving the performance of various semiconductor devices.

Collaborations

Throughout her career, Jenn-Tarng Lin has collaborated with notable colleagues, including Horng-Bor Lu and Kun-Lin Wu. These collaborations have contributed to her success and the development of her innovative patents.

Conclusion

Jenn-Tarng Lin's contributions to semiconductor technology through