The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2000
Filed:
Jan. 20, 1998
Hung-Yi Huang, Chang Hua Hsien, TW;
Wen-Yi Hsieh, Taipei, TW;
Chi-Rong Lin, Chang Hua Hsien, TW;
Jenn-Tarng Lin, Hsinchu, TW;
Abstract
A method of forming a metal plug. A contact window is formed to penetrate through a dielectric layer on a substrate having a MOS formed thereon. A titanium glue layer is formed on the dielectric layer and the circumference of the contact window. A titanium barrier layer is formed on the titanium nitride layer. Using nitrogen plasma bombardment on the titanium nitride layer, the structure of the titanium nitride layer is transformed. The number of the nucleation seeds is increased, and the size of grains is reduced. A metal layer is formed on the titanium nitride layer and fills the contact window. A part of the metal layer is removed and a metal plug within the contact window is formed.