Company Filing History:

15 out of 9,138

Industrial Technology Research Institute

Years Active: 2003-2025

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12300292 - Magnetic random access memory structure (2025-05-13),

2. 12033682 - In-plane magnetized spin-orbit magnetic device (2024-07-09),

3. 11844288 - In-plane magnetized spin-orbit magnetic device (2023-12-12),

4. 11758821 - Magnetic memory structure (2023-09-12),

5. 11625588 - Neuron circuit and artificial neural network chip (2023-04-11),

6. 11227990 - Magnetic memory structure (2022-01-18),

7. 10784441 - Perpendicularly magnetized spin-orbit magnetic device (2020-09-22),

8. 8283469 - Perylene diimide derivative and organic semiconductor element using the same material (2012-10-09),

9. 7535081 - Metal nanoline process and applications on growth of aligned nanostructure thereof (2009-05-19),

10. 7182914 - Structure and manufacturing process of a nano device transistor for a biosensor (2007-02-27),

11. 7001805 - Method for fabricating n-type carbon nanotube device (2006-02-21),

12. 6962839 - Apparatus and manufacturing process of carbon nanotube gate field effect transistor (2005-11-08),

13. 6852582 - Carbon nanotube gate field effect transistor (2005-02-08),

14. 6821911 - Manufacturing method of carbon nanotube transistors (2004-11-23),

15. 6723624 - Method for fabricating n-type carbon nanotube device (2004-04-20),

Title: Jeng-Hua Wei: Innovator in Magnetic Memory Technology

Introduction

Jeng-Hua Wei is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of magnetic memory technology, holding a total of 16 patents. His innovative work has paved the way for advancements in data storage solutions.

Latest Patents

One of Jeng-Hua Wei's latest patents is a magnetic random access memory (MRAM) structure. This MRAM structure includes a first write electrode, a first magnetic tunnel junction (MTJ) stack, a voltage control electrode, a second MTJ stack, and a second write electrode. The first MTJ stack consists of a first free layer, a first tunnel barrier layer, and a first fixed layer. The voltage control electrode is positioned on the first MTJ stack, while the second MTJ stack includes a second fixed layer, a second tunnel barrier layer, and a second free layer. The second write electrode is situated on the second MTJ stack.

Another notable patent is the in-plane magnetized spin-orbit magnetic device. This device comprises a heavy metal layer, an antiferromagnetic layer, and a magnetic tunnel junction. The antiferromagnetic layer is placed on the heavy metal layer, and the magnetic tunnel junction is positioned on the antiferromagnetic layer. The magnetic tunnel junction consists of a free layer, a barrier layer, and a pinned layer, with the film surface shape of the free layer being a rounded rectangle.

Career Highlights

Jeng-Hua Wei has worked with esteemed organizations such as the Industrial Technology Research Institute and Tsinghua University. His experience in these institutions has allowed him to develop and refine his innovative ideas in magnetic memory technology.

Collaborations

Throughout his career, Jeng-Hua Wei has collaborated with notable colleagues, including Ming-Jer Kao and Hung-Hsiang Wang. These partnerships have contributed to the advancement of his research and inventions.

Conclusion

Jeng-Hua Wei is a distinguished inventor whose work in magnetic memory technology has led to significant advancements in the field. His patents reflect his innovative spirit and dedication to improving data storage solutions.

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