The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Jun. 03, 2003
Jeng-hua Wei, Taipei, TW;
Hsin-hui Chen, Kaohsiung, TW;
Ming-jiunn Lai, Taichung, TW;
Hung-hsiang Wang, Taipei, TW;
Ming-jer Kao, Tainan, TW;
Jeng-Hua Wei, Taipei, TW;
Hsin-Hui Chen, Kaohsiung, TW;
Ming-Jiunn Lai, Taichung, TW;
Hung-Hsiang Wang, Taipei, TW;
Ming-Jer Kao, Tainan, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
The present invention generally relates to an apparatus and method of carbon nanotube (CNT) gate field effect transistor (FET), which is used to replace the current metal gate of transistor for decreasing the gate width greatly. The carbon nanotube has its own intrinsic characters of metal and semiconductor, so it can be the channel, connector or next-level gate of transistor. Furthermore, the transistor has the structure of exchangeable source and drain, and can be defined the specificity by outside wiring.