The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Dec. 05, 2003
Po-Yuan Lo, Hsinchu, TW;
Jih-Shun Chiang, Hsinchu, TW;
Jeng-Hua Wei, Hsinchu, TW;
Chien-Liang Hwang, Hsinchu, TW;
Hung-Hsiang Wang, Hsinchu, TW;
Ming-Jiunn Lai, Hsinchu, TW;
Ming-Jer Kao, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A manufacturing method of carbon nanotube transistors is disclosed. The steps include: forming an insulating layer on a substrate; forming a first oxide layer on the insulating layer using a solution with cobalt ion catalyst by spin-on-glass (SOG); forming a second oxide layer on the first oxide layer using a solution without the catalyst; forming a blind hole on the second oxide layer using photolithographic and etching processes, the blind hole exposing the first oxide layer, the sidewall of the second oxide layer, and the insulating layer; forming a single wall carbon nanotube (SWNT) connecting the first oxide layer separated by the blind hole and parallel to the substrate; and forming a source and a drain connecting to both ends of the SWNT, respectively.