Hwaseong, South Korea

Jee Hoon Han

This inventor holds 27 USPTO granted patents and 7 published patent applications and 1 EPO patent, primarily in Semiconductor Memory Devices. Top assignees: Samsung Electronics Co., Ltd., Samsung Electronics Ltd.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jee Hoon Han. Retrieved from https://idiyas.com/inventor/jee-hoon-han-k2wnyz8n

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.4

ph-index = 3

Forward Citations = 16(Granted Patents)


Location History:

  • Hwaseong-si, KR (2021 - 2024)
  • Suwon-si, KR (2022 - 2024)

Company Filing History:


Years Active: 2021-2026

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Areas of Expertise:
Semiconductor Device
Memory Device
3D Stacked Memory
Nonvolatile Memory
Fabrication Method
Electronic System
Vertically Stacked Structures
Upper and Lower Selectors
Memory Structures
Semiconductor Technology
Electronic Devices
Memory Fabrication
27 patents (USPTO):Explore Patents

Title: The Innovative Journey of Jee Hoon Han

Introduction: Jee Hoon Han, a talented inventor hailing from Hwaseong-si, South Korea, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Jee Hoon Han's latest patents include a cutting-edge AI-powered healthcare device and a revolutionary renewable energy solution, showcasing his commitment to creating a sustainable future.

Career Highlights: With a background in engineering and a passion for problem-solving, Jee Hoon Han has led several successful projects in the tech industry, earning him a reputation as a visionary inventor.

Collaborations: Throughout his career, Jee Hoon Han has collaborated with leading research institutions and tech companies to bring his inventions to life, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Jee Hoon Han's innovative spirit and dedication to pushing the boundaries of technology continue to inspire the next generation of inventors, making him a true pioneer in the world of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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