The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Feb. 25, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor memory device includes a cell unit including a stack structure and a channel structure penetrating through the stack structure, the stack structure including at least one string selection gate and a plurality of cell gates, cell separation structures separating the cell unit in a first direction, and gate cutting structures defining regions within the cell unit between adjacent cell separation structures. The cell unit includes a first region defined between a first cell separation structure and a first gate cutting structure and a second region defined between the first gate cutting structure and a second gate cutting structure. A ratio of a region of the at least one string selection gate that is occupied by a conductive material in the second region is greater than a ratio of a region of at least one cell gate that is occupied by the conductive material in the second region.