The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2024

Filed:

Nov. 18, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyo Joon Ryu, Hwaseong-si, KR;

Hee Suk Kim, Hwaseong-si, KR;

Jeong Yong Sung, Hwaseong-si, KR;

Jee Hoon Han, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 43/50 (2023.01); H01L 23/522 (2006.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/50 (2023.02); H01L 23/5226 (2013.01); H10B 43/27 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor memory device includes a mold structure including a plurality of wordlines on a front side of a first substrate, and a string selection line and a stopper line on the plurality of wordlines. A channel structure extends in a vertical direction to penetrate the mold structure. A block separation area extends in a first direction to cut the mold structure. A protective structure is interposed between the block separation area and the stopper line and not between the block separation area and the string selection line and not between the block separation area and the plurality of wordlines. A string separation structure extends in the first direction to cut the string selection line and the stopper line. A bitline extends in a second direction on the mold structure. A bitline contact connects the channel structure and the bitline.


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