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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12532727 B1

PDFFull Text
Date of Patent:
Jan. 20, 2026

Filed:

Apr. 26, 2022

Semiconductor device, semiconductor memory device including the same, electronic system including the same, and method for fabricating the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ju Seong Min, Seoul, KR;

Jae-Bok Baek, Osan-si, KR;

Jee Hoon Han, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

HARNESS, DICKEY & PIERCE, P.L.C.

Primary Examiner:

Brigitte A Paterson

Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 21/768 (2006.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor device includes a lower insulating film that includes a first and second trenches on a substrate, a first wiring in the first trench, a second wiring in the second trench, a capping insulating film including an insulating recess portion and an insulating liner portion, an upper insulating film on the capping insulating film, and an upper contact that penetrates the capping insulating film and connects to the first wiring, The insulating recess portion is in the second trench and the insulating liner portion extends along an upper surface of the lower insulating film. The upper contact includes a contact recess portion in the first trench, an extended portion connected to the contact recess portion, and a plug portion connected to the extended portion inside the upper insulating film. A width of the extended portion is greater than a width of the plug portion.

Find Patent Forward Citations

Min, Ju. (2026). Semiconductor device, semiconductor memory device including the same, electronic system including the same, and method for fabricating the same (U.S. Patent No. 12532727). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12532727

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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