Palaiseau, France

Jean-Luc Reverchon

This inventor holds 14 USPTO granted patents and 3 published patent applications and 14 EPO patents. Top assignees: Commissariat a L'energie Atomique Et Aux Energies Alternatives, Thales, Lynred. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jean-Luc Reverchon. Retrieved from https://idiyas.com/inventor/jean-luc-reverchon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 14 

% Patents Active = 85.7

 

Average Co-Inventor Count = 2.8

ph-index = 1

Forward Citations = 6(Granted Patents)


Location History:

  • Paris, FR (2015)
  • Palaiseu, FR (2021)
  • Palaiseau, FR (2016 - 2022)

Company Filing History:


Years Active: 2015-2026

Loading Chart...
Loading Chart...
14 patents (USPTO):Explore Patents

Title: The Innovative Mind of Jean-Luc Reverchon

Introduction

Jean-Luc Reverchon, based in Palaiseau, France, is a prominent inventor known for his significant contributions to the field of infrared detection technology. With a remarkable portfolio of 13 patents, Reverchon has carved out a niche in the engineering of charge carriers to enhance the performance of infrared detectors.

Latest Patents

One of Jean-Luc Reverchon's latest patents is an "Infrared Detector Improved via Engineering of the Effective Mass of Charge Carriers." This innovative device is designed for detecting infrared radiation and features at least one pixel with an axis in a specified direction. The pixel comprises a first absorbent planar structure that includes multiple semiconductor layers. The materials and structure of these layers are meticulously engineered to form an effective valence band with varying energy levels, which are occupied by distinct types of positive charge carriers known as heavy holes and light holes.

Additionally, Reverchon holds a patent for a "Radiation Detector and Associated Manufacturing Method." This complex device includes a stack of layers with an absorbent layer, contact layers, and multiple detection zones. The design involves various semiconductor materials from the periodic table, specifically focusing on elements from groups IIIA and VA, ensuring optimal performance and reliability.

Career Highlights

Throughout his career, Reverchon has worked with renowned organizations, including Thales and the Commissariat à l'Énergie Atomique et aux Énergies Alternatives. His experiences at these leading firms have enabled him to advance his research and innovations in the field of sensing technologies and materials engineering.

Collaborations

Jean-Luc has collaborated with esteemed professionals such as Axel Evirgen and Philippe Bois. Their joint efforts have contributed to the development of cutting-edge technologies and solutions in the field of radiation detection.

Conclusion

Jean-Luc Reverchon stands out as an influential figure in the world of inventions and patent innovations. His work, especially in improving infrared detection devices, demonstrates the impact of meticulous engineering in advancing technology. As he continues to push the boundaries of innovation, Reverchon remains a key player in the realm of electromagnetic detection and materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…