The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Sep. 23, 2016
Applicants:

Thales, Courbevoie, FR;

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Jean-Luc Reverchon, Palaiseau, FR;

Philippe Bois, Palaiseau, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/109 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/0216 (2014.01); H01L 31/09 (2006.01);
U.S. Cl.
CPC ...
H01L 31/109 (2013.01); H01L 31/02161 (2013.01); H01L 31/03046 (2013.01); H01L 31/035272 (2013.01); H01L 31/09 (2013.01);
Abstract

Disclosed is a photodetector which includes, in series along a stacking direction: a first layer forming a substrate of a first semiconductor material; a second layer forming a photoabsorbent layer of a second semiconductor material having a second gap; a third layer forming a barrier layer of a third semiconductor material; and a fourth layer forming a window layer of a fourth semiconductor material, the first material, the third material and the fourth material each having a gap larger than the second gap, the fourth material being n-doped or non-doped and the third material being non-doped or lightly p-doped when the second material is n-doped, and the fourth material being p-doped or non-doped and the third material being non-doped or lightly n-doped when the second material is p-doped.


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