The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

Dec. 16, 2016
Applicants:

Thales, Courbevoie, FR;

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Florian Legoff, Palaiseau, FR;

Jean-Luc Reverchon, Palaiseau, FR;

Christophe Kazmierski, Palaiseau, FR;

Jean Decobert, Palaiseau, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 27/146 (2006.01); H01L 31/101 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14649 (2013.01); H01L 27/1469 (2013.01); H01L 27/14601 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14638 (2013.01); H01L 27/14641 (2013.01); H01L 27/14647 (2013.01); H01L 27/14652 (2013.01); H01L 27/14694 (2013.01); H01L 31/101 (2013.01); H01L 27/14603 (2013.01);
Abstract

The invention relates to a radiation detector element () comprising a stack () of layers superimposed in a stacking direction (Z), the stack () having a first face () and a second face () and comprising a radiation-absorbing layer () consisting of a first semiconductor material (M) having a first band gap value and at least one barrier layer () consisting of a second semiconductor material (M) having a second band gap value, the second band gap value being strictly higher than the first band gap value. The second face () has at least one strip () defined in the stacking direction (Z) by the barrier layer (), the strip () consisting of the second semiconductor material (M) and having a doping of the first type and a free carrier density higher than or equal to 1.1017 cm−3.


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