The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2022

Filed:

Jul. 30, 2018
Applicants:

Thales, Courbevoie, FR;

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Florian Le Goff, Palaiseau, FR;

Jean-Luc Reverchon, Palaiseau, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/103 (2006.01); H01L 27/146 (2006.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H01L 31/1844 (2013.01); H01L 31/1035 (2013.01); H01L 27/14694 (2013.01); H04N 5/378 (2013.01);
Abstract

A process for fabricating a hybrid optical detector, includes the steps of: assembling, via an assembly layer, on the one hand an absorbing structure and on the other hand a read-out circuit, locally etching, through the absorbing structure, the assembly layer and the read-out circuit up to the contacts, so as to form electrical via-holes, depositing a protective layer on the walls of the via-holes, producing a doped region of a second doping type different from the first doping type by diffusing a dopant into the absorbing structure through the protective layer, the region extending annularly around the via-holes so as to form a diode, depositing a metallization layer on the walls of the via-holes allowing the doped region to be electrically connected to the contact.


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