Fremont, CA, United States of America

Jaroslav Raszka


Average Co-Inventor Count = 1.5

ph-index = 11

Forward Citations = 278(Granted Patents)


Company Filing History:


Years Active: 2000-2008

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12 patents (USPTO):Explore Patents

Title: Jaroslav Raszka: Innovator in Memory Technology

Introduction

Jaroslav Raszka is a prominent inventor based in Fremont, CA (US). He has made significant contributions to the field of memory technology, holding a total of 12 patents. His work focuses on enhancing the performance and reliability of memory systems.

Latest Patents

Raszka's latest patents include innovative methods and apparatuses for a sense amplifier. These inventions involve various apparatuses and methods in which a sense amplifier circuit couples to a current source to provide current for the sense amplifier circuit. Additionally, it connects to one or more memory cells to sense a charge being stored by each memory cell. His store protection circuitry reduces a voltage potential across critical nodes of the sense amplifier circuit, ensuring optimal performance when the store voltage is applied to the memory cells. Another notable patent addresses memory cell sensing with low noise generation. This invention utilizes a noise reduction circuit to sense groups of memory cells, allowing for simultaneous operations on multiple groups while minimizing noise interference.

Career Highlights

Throughout his career, Raszka has worked with notable companies, including Virage Logic Corporation. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

Raszka has collaborated with talented individuals in the field, including Kim-Kwong Michael Han and Narbeh Derhacobian. These collaborations have further enriched his work and contributions to memory technology.

Conclusion

Jaroslav Raszka's innovative work in memory technology and his impressive portfolio of patents highlight his significant impact on the industry. His contributions continue to shape the future of memory systems and enhance their performance.

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