Jürgen Niess

Title: Jürgen Niess: Innovator in Molecular Removal and Defect Profiling

Introduction

Jürgen Niess is a notable inventor based in Sontheim, Germany. He has made significant contributions to the field of molecular removal and defect profiling in semiconductor substrates. With a total of 2 patents, his work showcases innovative methods that have potential applications in various industries.

Latest Patents

One of Jürgen Niess's latest patents is a method for removing adsorbed molecules from a chamber. This method involves introducing polar molecules that have a desorptive effect on the first molecules, specifically nitrogen and hydrogen, including NH molecules. Another significant patent focuses on adjusting defect profiles in crystal or crystalline-like structures. This invention relates to a method for generating defect profiles in a substrate, preferably a semiconductor, during thermal treatment in a process chamber. The method allows for controlling the concentration and density distribution of defects using at least one reactive component, depending on two different process gases that act upon different surfaces of the substrate.

Career Highlights

Throughout his career, Jürgen Niess has worked with several companies, including Steag RTP Systems GmbH and Mattson Thermal Products GmbH. His experience in these organizations has contributed to his expertise in the field of semiconductor technology and molecular processes.

Collaborations

Jürgen has collaborated with notable professionals in his field, including Wilfried Lerch and Zsolt Nenyei. These collaborations have likely enriched his work and expanded the impact of his inventions.

Conclusion

Jürgen Niess is a distinguished inventor whose innovative methods in molecular removal and defect profiling have made a significant impact in the semiconductor industry. His contributions continue to influence advancements in technology and research.