Austin, TX, United States of America

James H Hussey, Jr

This inventor holds 6 USPTO granted patents. Top assignee: Advanced Micro Devices Corporation. Active years: 1994-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: James H Hussey, Jr. Retrieved from https://idiyas.com/inventor/james-h-hussey-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 142(Granted Patents)


Company Filing History:


Years Active: 1994-2004

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6 patents (USPTO):Explore Patents

Title: Innovations of James H Hussey, Jr.

Introduction

James H Hussey, Jr. is a notable inventor based in Austin, TX (US). He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work primarily focuses on methods and processes that enhance the efficiency and effectiveness of semiconductor manufacturing.

Latest Patents

One of his latest patents is titled "Control of two-step gate etch process." This invention is directed to a method of controlling an etching process used to form a gate electrode on a semiconductor device. In one embodiment, the method comprises forming a layer of silicon dioxide above a semiconducting substrate, and forming a layer of polysilicon above the layer of silicon dioxide. The method further comprises sensing a thickness of the layer of polysilicon and adjusting, based upon the sensed thickness of said layer of polysilicon, at least one parameter of an etching process to be performed on said layer of polysilicon to define a gate electrode of a transistor. This etching process is comprised of at least a timed etch process and an endpoint etch process.

Another significant patent is the "Method and apparatus for run-to-run control of trench profiles." This invention provides a method and an apparatus for performing run-to-run control of trench profiles. At least one semiconductor wafer is processed, and trench metrology data from the processed semiconductor wafer is acquired. Data relating to at least one process chamber characteristic is also acquired while processing the semiconductor wafer. A chamber characteristic adjustment process is performed in response to the trench metrology data and the data relating to the processing chamber characteristic. A feedback adjustment of the processing chamber characteristic is performed in response to the chamber characteristic adjustment process.

Career Highlights

James H Hussey, Jr. is currently employed at Advanced Micro Devices Corporation, a leading company in the semiconductor industry. His work at AMD has allowed him to contribute to cutting-edge technologies that drive advancements in electronic devices.

Collaborations

Throughout his career, James has collaborated with several talented individuals, including Matthew A Purdy and Douglas J Bonser. These collaborations have fostered innovation and have led to the development of impactful technologies in the semiconductor field.

Conclusion

James H Hussey, Jr. is a distinguished inventor whose work in semiconductor technology has resulted in multiple patents that enhance manufacturing processes. His contributions

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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