The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2004

Filed:

Aug. 01, 2001
Applicant:
Inventors:

James H. Hussey, Jr., Austin, TX (US);

Matthew A. Purdy, Austin, TX (US);

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 1/900 ;
U.S. Cl.
CPC ...
G06F 1/900 ;
Abstract

A method and an apparatus are provided for performing run-to-run control of trench profiles. At least one semiconductor wafer is processed. A trench metrology data from the processed semiconductor wafer is acquired. Data relating to at least one process chamber characteristic is acquired while processing the semiconductor wafer. A chamber characteristic adjustment process is performed in response to the trench metrology data and the data relating to the processing chamber characteristic. A feedback adjustment of the processing chamber characteristic is performed in response to the chamber characteristic adjustment process.


Find Patent Forward Citations

Hussey, Jr., James. (2004). Method and apparatus for run-to-run control of trench profiles (U.S. Patent No. 6728591). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6728591

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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