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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6245581 B1

PDFFull Text
Date of Patent:
Jun. 12, 2001

Filed:

Apr. 19, 2000

Method and apparatus for control of critical dimension using feedback etch control

Applicant:
Inventors:

Douglas Bonser, Austin, TX (US);

Anthony J. Toprac, Austin, TX (US);

Matthew Purdy, Austin, TX (US);

John R. Behnke, Austin, TX (US);

James H. Hussey, Jr., Austin, TX (US);

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:

Williams, Morgan & Amerson, P.C.

Primary Examiner:

William Powell

Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract

The present invention provides for a method and an apparatus for controlling critical dimensions. At least one run of semiconductor devices is processed. A critical dimension measurement is performed upon at least one of the processed semiconductor device. An analysis of the critical dimension measurement is performed. A secondary process upon the semiconductor device in response to the critical dimension analysis is performed.

Find Patent Forward Citations

Bonser, Douglas. (2001). Method and apparatus for control of critical dimension using feedback etch control (U.S. Patent No. 6245581). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6245581

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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