James G Deak

This inventor holds 43 USPTO granted patents and 5 EPO patents, primarily in Magnetoresistive Memory. Top assignees: Micron Technology Incorporated, Nve Corporation. Active years: 2003-2015.

USPTO Granted Patents = 43

% Patents Active = 97.7

EPO Patents = 5 (Patent Applications = 2)

Average Co-Inventor Count = 1.3

ph-index = 12

Forward Citations = 458(Granted Patents)

Location History:

Boise, ID (US) (2003 - 2009)
Eden Prairie, MN (US) (2006 - 2015)

Company Filing History:

36 out of 39,125

Micron Technology Incorporated

Years Active: 2003-2015

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Areas of Expertise:

Magnetoresistive Memory

MRAM Structures

Tamper Detection

Magnetic Annealing

Electroless Plating

Spin Momentum Transfer

Memory Arrays

Flux Concentrator

Thermal Stability

Magnetic Tunnel Junction

Memory Cell

Integrated Circuit Packaging

43 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9030200 - Spin dependent tunneling devices with magnetization states based on stress conditions (2015-05-12),

2. 8294577 - Stressed magnetoresistive tamper detection devices (2012-10-23),

3. 7868404 - Vortex spin momentum transfer magnetoresistive device (2011-01-11),

4. 7855085 - System and method for reducing shorting in memory cells (2010-12-21),

5. 7715228 - Cross-point magnetoresistive memory (2010-05-11),

6. 7601547 - Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers (2009-10-13),

7. 7547559 - Method for forming MRAM bit having a bottom sense layer utilizing electroless plating (2009-06-16),

8. 7468664 - Enclosure tamper detection and protection (2008-12-23),

9. 7411262 - Self-aligned, low-resistance, efficient memory array (2008-08-12),

10. 7385842 - Magnetic memory having synthetic antiferromagnetic pinned layer (2008-06-10),

11. 7381573 - Self-aligned, low-resistance, efficient memory array (2008-06-03),

12. 7358553 - System and method for reducing shorting in memory cells (2008-04-15),

13. 7306954 - Process flow for building MRAM structures (2007-12-11),

14. 7279762 - Magnetoresistive memory device assemblies, and methods of forming magnetoresistive memory device assemblies (2007-10-09),

15. 7274591 - Write current shunting compensation (2007-09-25),

Title: The Inventor James G Deak: Pioneering Innovations in Boise

Introduction: James G Deak is a renowned inventor based in Boise, ID, known for his groundbreaking contributions to various industries through his innovative creations.

Latest Patents: James G Deak holds several patents in the fields of technology, healthcare, and consumer products, showcasing his diverse range of expertise and creativity.

Career Highlights: With a career spanning over two decades, James G Deak has consistently pushed the boundaries of innovation, with his inventions revolutionizing the way we interact with everyday objects.

Collaborations: Throughout his career, James G Deak has collaborated with leading companies, research institutions, and universities to further develop and commercialize his inventions, solidifying his reputation as a visionary inventor.

Conclusion: James G Deak's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors, leaving a lasting impact on the world of technology and beyond.