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For the Inventor, By the Inventor

Eden Prairie, MN, United States of America

Nve Corporation


USPTO Granted Patents = 46

% Expired Patents = 8.7


Trademarks = 51

Forward Citations = 1,014

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24 inventors (with patents filed for the assignee):

goldMedal James M Daughton (25 out of 48 patents)

silverMedal Arthur V Pohm (15 out of 34 patents)

bronzeMedal Mark Christopher Tondra (12 out of 17 patents)

4.  Dexin Wang (8 out of 42 patents)

5.  James G Deak (7 out of 43 patents)

6.  John M Anderson (4 out of 4 patents)

7.  David J Brownell (3 out of 5 patents)

8.  John K Myers (3 out of 3 patents)

9.  Zhenghong Qian (3 out of 4 patents)

10.  Erik H Lange (2 out of 2 patents)

11.  Anthony D Popple (2 out of 2 patents)

12.  Catherine A Nordman (2 out of 7 patents)

13.  Brenda Anne Everitt (2 out of 16 patents)

14.  Jian-Gang Zhu (1 out of 22 patents)

15.  Albrecht Jander (1 out of 2 patents)


Core Competencies:
Magnetoresistive Sensor
Magnetic Memory Cells
Spin Dependent Tunneling
Hysteresis
Field Sensing Devices
Thin-Film Structures
Magnetization States
Tamper Detection
Nanocomposite Materials
Magnetic Field Sensor
Thermal Pulse Transitions
Signal Isolator

46 patents:

1. 11921172 - Magnetoresistive sensor element with synthetic antiferromagnet biasing (2024-03-05),
2. RE47583 - Circuit selection of magnetic memory cells and related cell structures (2019-08-26),
3. 9322889 - Low hysteresis high sensitivity magnetic field sensor (2016-04-26),
4. 9063090 - Method for fabricating thin-film structure magnetizable bead detector (2015-06-23),
5. 9030200 - Spin dependent tunneling devices with magnetization states based on stress conditions (2015-05-12),
6. 8884606 - Inverted magnetic isolator (2014-11-11),
7. 8773821 - Magnetoresistive-based mixed anisotropy high field sensor (2014-07-08),
8. RE44878 - Current switched magnetoresistive memory cell (2014-05-05),
9. 8294577 - Stressed magnetoresistive tamper detection devices (2012-10-23),
10. 7952345 - Inverted magnetic isolator (2011-05-31),
11. 7868404 - Vortex spin momentum transfer magnetoresistive device (2011-01-11),
12. 7813165 - Magnetic memory layers thermal pulse transitions (2010-10-12),
13. 7808062 - Signal isolator linear receiver (2010-10-05),
14. 7715228 - Cross-point magnetoresistive memory (2010-05-11),
15. 7660081 - Superparamagnetic platelets field sensing devices (2010-02-09),
Nve Corporation, headquartered in Eden Prairie, Minnesota, specializes in advanced magnetic technologies, focusing on magnetoresistive sensors and magnetic memory cells. The company is recognized for its expertise in spin-dependent tunneling and the development of thin-film structures, which are integral to various applications including magnetic field sensing and tamper detection. Nve's innovations extend to superparamagnetic devices and magnetizable bead detectors, positioning it as a leader in the field of magnetic sensing and memory solutions.
Profile summary based on public USPTO records.

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USPTO Data Jan 1 1976 - Oct 6 2026

Nve Corporation
46 Patents

#21 in Eden Prairie, MN

#216 in Minnesota

#7,590 in US

#15,096 in the World

Eden Prairie, MN (US)
Eden Prairie, MN, United States of America

Nve Corporation

Forward Citations = 1,014

24 inventors:

goldMedal James M Daughton (25 out of 48 patents)

silverMedal Arthur V Pohm (15 out of 34 patents)

bronzeMedal Mark Christopher Tondra (12 out of 17 patents)

4.  Dexin Wang (8 out of 42 patents)

5.  James G Deak (7 out of 43 patents)

Please report any incorrect information to [email protected]
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