For the Inventor, By the Inventor

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Eden Prairie, MN, United States of America

Nve Corporation

Calculating rank

USPTO Granted Patents = 46

% Expired Patents = 8.7

EPO Patents = 16

Trademarks = 51

Forward Citations = 1,020

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24 inventors (with patents filed for the assignee):

James M Daughton (25 out of 48 patents)

Arthur V Pohm (15 out of 34 patents)

Mark Christopher Tondra (12 out of 17 patents)

4. Dexin Wang (8 out of 42 patents)

5. James G Deak (7 out of 43 patents)

6. John M Anderson (4 out of 4 patents)

7. David J Brownell (3 out of 5 patents)

8. John K Myers (3 out of 3 patents)

9. Zhenghong Qian (3 out of 4 patents)

10. Erik H Lange (2 out of 2 patents)

11. Anthony D Popple (2 out of 2 patents)

12. Catherine A Nordman (2 out of 7 patents)

13. Brenda Anne Everitt (2 out of 16 patents)

14. Jian-Gang Zhu (1 out of 22 patents)

15. Albrecht Jander (1 out of 2 patents)

Core Competencies:

Magnetoresistive Sensor

Magnetic Memory Cells

Spin Dependent Tunneling

Hysteresis

Field Sensing Devices

Thin-Film Structures

Magnetization States

Tamper Detection

Nanocomposite Materials

Magnetic Field Sensor

Thermal Pulse Transitions

Signal Isolator

46 patents: Sort by Forward Citations

1. 11921172 - Magnetoresistive sensor element with synthetic antiferromagnet biasing (2024-03-05),

2. RE47583 - Circuit selection of magnetic memory cells and related cell structures (2019-08-26),

3. 9322889 - Low hysteresis high sensitivity magnetic field sensor (2016-04-26),

4. 9063090 - Method for fabricating thin-film structure magnetizable bead detector (2015-06-23),

5. 9030200 - Spin dependent tunneling devices with magnetization states based on stress conditions (2015-05-12),

6. 8884606 - Inverted magnetic isolator (2014-11-11),

7. 8773821 - Magnetoresistive-based mixed anisotropy high field sensor (2014-07-08),

8. RE44878 - Current switched magnetoresistive memory cell (2014-05-05),

9. 8294577 - Stressed magnetoresistive tamper detection devices (2012-10-23),

10. 7952345 - Inverted magnetic isolator (2011-05-31),

11. 7868404 - Vortex spin momentum transfer magnetoresistive device (2011-01-11),

12. 7813165 - Magnetic memory layers thermal pulse transitions (2010-10-12),

13. 7808062 - Signal isolator linear receiver (2010-10-05),

14. 7715228 - Cross-point magnetoresistive memory (2010-05-11),

15. 7660081 - Superparamagnetic platelets field sensing devices (2010-02-09),

Company Overview

Nve Corporation, headquartered in Eden Prairie, Minnesota, specializes in advanced magnetic technologies, focusing on magnetoresistive sensors and magnetic memory cells. The company is recognized for its expertise in spin-dependent tunneling and the development of thin-film structures, which are integral to various applications including magnetic field sensing and tamper detection. Nve's innovations extend to superparamagnetic devices and magnetizable bead detectors, positioning it as a leader in the field of magnetic sensing and memory solutions.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 27 2026

46 Patents

#21 in Eden Prairie, MN

#216 in Minnesota

#7,610 in US

#15,136 in the World

Eden Prairie, MN, United States of America

Nve Corporation

Forward Citations = 1,020

24 inventors:

James M Daughton (25 out of 48 patents)

Arthur V Pohm (15 out of 34 patents)

Mark Christopher Tondra (12 out of 17 patents)

4. Dexin Wang (8 out of 42 patents)

5. James G Deak (7 out of 43 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Nve Corporation. Retrieved from https://idiyas.com/company/nve

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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