The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2015

Filed:

Sep. 14, 2012
Applicant:

James G. Deak, Eden Prairie, MN (US);

Inventor:

James G. Deak, Eden Prairie, MN (US);

Assignee:

NVE Corporation, Eden Prairie, MN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/12 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/16 (2013.01);
Abstract

A spin dependent tunneling device includes an electrically insulative material intermediate layer, a magnetization reference layer on one of the opposite major surfaces of the intermediate layer, and a memory film of a magnetostrictive, anisotropic ferromagnetic material on the other of the opposite major surfaces of the intermediate layer. The memory film material has a magnetization directed at an angle with respect to the relatively fixed direction of the magnetization reference layer, due to an effective magnetic bias field being present, in a first kind of stress condition with unequal coercivities for external magnetic fields applied in opposite directions. In one kind of stress condition the device has a coercivity with a magnitude exceeding that of the effective magnetic bias field, and in another kind of stress condition, the device has a coercivity with a magnitude less than that of the effective magnetic bias field.


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