Saratoga, CA, United States of America

James A Cunningham

This inventor holds 34 USPTO granted patents and 1 published patent application, primarily in Copper Interconnect Systems. Top assignees: Vlsi Technology, Inc., Sgs-Thomson Microelectronics Limited, Beck Semiconductor LLC. Active years: 1980-2010.

USPTO Granted Patents = 34 

% Patents Active = 97.1

Average Co-Inventor Count = 1.2

ph-index = 13

Forward Citations = 751(Granted Patents)


Location History:

  • Patterson, LA (US) (1993 - 1998)
  • Bellrose, NY (US) (1999)
  • St. Mary Parish, LA (US) (1996 - 2002)
  • Saratoga, CA (US) (1980 - 2010)

Company Filing History:


Years Active: 1980-2010

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Areas of Expertise:
Copper Interconnects
Electromigration Resistance
Semiconductor Fabrication
Flash EEPROM
High-Temperature Stable Gate
DRAM Cell Isolation
Thin-Film Transistor
Fire Suppression System
Bubble Memory
Self-Aligned Gate Electrode
Conductive Cap Layers
34 patents (USPTO):Explore Patents

Title: **James A. Cunningham: Innovator in Integrated Circuit Technology**

Introduction

James A. Cunningham, based in Saratoga, California, is a prolific inventor with an impressive portfolio of 34 patents. His contributions to the field of integrated circuit technology have significantly advanced the design and manufacturing processes of electronic devices. Cunningham’s work focuses on enhancing the performance and reliability of integrated circuits through innovative methods and materials.

Latest Patents

Cunningham's latest patents demonstrate his expertise in integrated circuit manufacturing. One of his notable inventions is a **Method for Making Integrated Circuit Including Interconnects with Enhanced Electromigration Resistance Using Doped Seed Layer**. This innovative method involves forming an interconnect structure adjacent to a substrate, utilizing a barrier layer, and incorporating a doped copper seed layer which enhances the electromigration resistance of the integrated circuit. The doped seed layer can include various dopants such as calcium, cadmium, zinc, neodymium, tellurium, and ytterbium, ensuring a diffusion process that strengthens the copper layer.

Another significant patent is related to **Methods of Manufacturing Copper Interconnect Systems**. This invention outlines the composition of an integrated circuit that comprises a substrate, dielectric layers, and conductive regions with a specific design to improve performance. The incorporation of a diffusion barrier layer and an alloy seed layer highlights Cunningham’s commitment to elevating manufacturing techniques.

Career Highlights

Throughout his career, James A. Cunningham has made substantial contributions to integrated circuit technology, particularly during his tenure at companies like VLSI Technology, Inc. His innovative approaches have led to patents that are critical in shaping modern semiconductor technology, which is used in various consumer electronics today.

Collaborations

Cunningham has collaborated with noteworthy individuals such as Devereux J. McKnight and Brent H. McKnight. These partnerships demonstrate the collaborative spirit of innovation in developing advanced technologies within the semiconductor industry.

Conclusion

James A. Cunningham’s dedication to innovation in integrated circuit technology is evident through his extensive patent portfolio and collaborative efforts. His inventions not only enhance the functionality of integrated circuits but also pave the way for future advancements in the electronics field. As technology continues to evolve, Cunningham’s contributions will remain instrumental in shaping the future of semiconductor manufacturing.

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