Clifton Park, NY, United States of America

Ishwara B Bhat


Average Co-Inventor Count = 4.3

ph-index = 3

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2015-2023

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6 patents (USPTO):Explore Patents

Title: Innovator Ishwara B Bhat: Pioneering Advancements in Radiation-Detection Technologies

Introduction: Ishwara B Bhat, a prominent inventor based in Clifton Park, NY, has made significant contributions to the field of semiconductor technology with a total of six patents to his name. His innovative work focuses on radiation-detecting structures and fabrication methods, which are crucial for advancements in various scientific and industrial applications.

Latest Patents: Among his latest patented inventions are novel radiation-detecting structures and corresponding fabrication methods. These methods involve providing a substrate that features at least one trench extending into the substrate from its upper surface. Bhat's approach includes epitaxially forming a radiation-responsive semiconductor material layer from the sidewalls of the trench, which generates charge carriers in response to incident radiation. In one of his embodiments, the sidewalls consist of a (111) surface of the substrate, promoting the formation of the semiconductor layer. Additionally, he has worked on selectively increasing the porosity of a semiconductor layer through electrochemical processing, leveraging its increased conductivity to facilitate the fabrication of advanced semiconductor structures.

Career Highlights: Ishwara B Bhat has accumulated valuable experience in notable organizations, including Rensselaer Polytechnic Institute and Lawrence Livermore National Security, LLC. His work at these institutions has positioned him as a key figure in research and development, particularly in the domains of semiconductor technologies and materials science.

Collaborations: Throughout his career, Bhat has collaborated with esteemed individuals in the field, including Rajendra P Dahal and Yaron Danon. Their collective efforts have fostered advancements in the technologies that underpin Bhat's innovative patents.

Conclusion: Ishwara B Bhat's pioneering contributions to radiation detection and semiconductor fabrication methods underscore his importance as an inventor. With his ongoing research and development, he continues to shape the future of technology, paving the way for new possibilities in the application of semiconductor materials in various fields.

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