Rensselaer Polytechnic Institute

Other

Lawrence Livermore National Security, LLC

Ishwara B Bhat

Rajendra P Dahal

Yaron Danon

James Jian-qiang Lu

Jacky Kuan-Chih Huang

James J Q Lu

Lars F Voss

Adam M Conway

Rebecca J Nikolic

Qinghui Shao

Sara Elizabeth Harrison

Tat-Sing Chow

Radiation detecting-structures and fabrications methods thereof are presented. The methods include, for instance: providing a substrate, the substrate including at least one trench extending into the substrate from an upper surface thereof; and epitaxially forming a radiation-responsive semiconductor material layer from one or more sidewalls of the at least one trench of the substrate, the radiation-responsive semiconductor material layer responding to incident radiation by generating charge carriers therein. In one embodiment, the sidewalls of the at least one trench of the substrate include a (111) surface of the substrate, which facilitates epitaxially forming the radiation-responsive semiconductor material layer. In another embodiment, the radiation-responsive semiconductor material layer includes hexagonal boron nitride, and the epitaxially forming includes providing the hexagonal boron nitride with an a-axis aligned parallel to the sidewalls of the trench.

Radiation-detecting structures and fabrication methods thereof

Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

Selective, electrochemical etching of a semiconductor

Methods for fabricating radiation-detecting structures are presented. The methods include, for instance: fabricating a radiation-detecting structure, the fabricating including: providing a semiconductor substrate, the semiconductor substrate having a plurality of cavities extending into the semiconductor substrate from a surface thereof; and electrophoretically depositing radiation-detecting particles of a radiation-detecting material into the plurality of cavities extending into the semiconductor substrate, where the electrophoretically depositing fills the plurality of cavities with the radiation-detecting particles. In one embodiment, the providing can include electrochemically etching the semiconductor substrate to form the plurality of cavities extending into the semiconductor substrate. In addition, the providing can further include patterning the surface of the semiconductor substrate with a plurality of surface defect areas, and the electrochemically etching can include using the plurality of surface defect areas to facilitate electrochemically etching into the semiconductor substrate through the plurality of surface defect areas to form the plurality of cavities.

Fabricating radiation-detecting structures

In one embodiment, an apparatus includes: a first layer including a n+ dopant or p+ dopant; an intrinsic layer formed above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, cavity regions being defined between the pillars; and a second layer deposited on a periphery of the pillars thereby forming coated pillars, the second layer being substantially absent on the planar portion of the intrinsic layer between the coated pillars. The second layer includes an n+ dopant when the first layer includes a p+ dopant. The second layer includes a p+ dopant when the first layer includes an n+ dopant. The apparatus includes a neutron sensitive material deposited between the coated pillars and above the planar portion of the intrinsic layer. In additional embodiments, an upper portion of each of the pillars includes a same type of dopant as the second layer.

Capacitance reduction for pillar structured devices

Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure.

Neutron-detecting apparatuses and methods of fabrication

Growing community of inventors

Clifton Park, NY, United States of America

Ishwara B Bhat