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For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Irving T Ho

USPTO Granted Patents = 11

Average Co-Inventor Count = 2.0

ph-index = 8

Forward Citations = 325(Granted Patents)


Company Filing History:

goldMedal11 out of 164,271 
 
International Business Machines Corporation
 patents

Years Active: 1976-1984

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11 patents (USPTO):Explore Patents
1. 4462040 - Single electrode U-MOSFET random access memory (1984-07-24),
2. 4252579 - Method for making single electrode U-MOSFET random access memory (1981-02-24),
3. 4209350 - Method for forming diffusions having narrow dimensions utilizing (1980-06-24),
4. 4209349 - Method for forming a narrow dimensioned mask opening on a silicon body (1980-06-24),
5. 4090254 - Charge injector transistor memory (1978-05-16),
6. 4070687 - Composite channel field effect transistor and method of fabrication (1978-01-24),
7. 4054989 - High reliability, low leakage, self-aligned silicon gate FET and method (1977-10-25),
8. 4017883 - Single-electrode charge-coupled random access memory cell with impurity (1977-04-12),
9. 4016431 - Optimal driver for LSI (1977-04-05),
10. 4014036 - Single-electrode charge-coupled random access memory cell (1977-03-22),
11. 3943542 - High reliability, low leakage, self-aligned silicon gate FET and method (1976-03-09),

Title: The Innovations of Irving T. Ho

Introduction

Irving T. Ho is a prominent inventor based in Poughkeepsie, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of random access memory devices. With a total of 11 patents to his name, Ho's work has had a lasting impact on the industry.

Latest Patents

One of Ho's latest patents is for a method of creating single electrode U-MOSFET random access memory. This innovative approach involves using a monocrystalline silicon P substrate with various layers to form highly dense, dielectrically isolated, U-shaped MOSFETs. The process includes forming U-shaped openings through reactively ion etching, filling these openings with insulator material, and depositing a conductive layer of N+ doped polycrystalline silicon. The method also details the creation of storage cells and bit lines, showcasing Ho's expertise in semiconductor fabrication.

Career Highlights

Irving T. Ho has spent a significant portion of his career at International Business Machines Corporation (IBM). His work at IBM has allowed him to collaborate with leading experts in the field and contribute to groundbreaking technologies. His patents reflect his commitment to advancing memory technology and improving data storage solutions.

Collaborations

Throughout his career, Ho has worked alongside notable colleagues such as Jacob Riseman and Hwa N. Yu. These collaborations have fostered an environment of innovation and have led to the development of several key technologies in the semiconductor industry.

Conclusion

Irving T. Ho is a distinguished inventor whose contributions to semiconductor technology have been invaluable. His innovative patents and collaborations at IBM highlight his dedication to advancing the field of random access memory. His work continues to influence the industry and inspire future innovations.

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