The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 1978

Filed:

Jun. 06, 1977
Applicant:
Inventors:

Irving Tze Ho, Poughkeepsie, NY (US);

Jacob Riseman, Poughkeepsie, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 23 ; 357 54 ; 357 91 ;
Abstract

An improved composite channel field effect transistor and method of fabrication, which exhibits high density characteristics and yields high performance with less sensivity to threshold shift due to hot electrons when operated at high source to drain voltage levels.


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