This inventor holds 2 USPTO granted patents. Top assignees: Matrix Semiconductor, Inc., Sandisk 3D LLC. Active years: 2006-2009.
Company Filing History:
Years Active: 2006-2009
Title: Igor Koutnetsov: Innovator in Flash Memory Technology
Introduction
Igor Koutnetsov is a prominent inventor based in Santa Clara, CA, known for his significant contributions to the field of flash memory technology. With a total of 2 patents, Koutnetsov has developed innovative solutions that enhance the efficiency and functionality of memory arrays.
Latest Patents
Koutnetsov's latest patents include a "Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same." This invention features a three-dimensional flash memory array that utilizes thin film transistors arranged in series-connected NAND strings, achieving a 4F memory cell layout. The memory array is designed to be programmed and erased using only tunneling currents, eliminating leakage paths through non-selected memory cells. Each NAND string is equipped with two block select devices that couple one end to a global bit line and the other to a shared bias node. The memory cells are primarily depletion mode SONOS devices, allowing for programming to a near depletion threshold voltage. Additionally, the design allows for interleaving NAND strings across multiple memory levels, connected by vertical stacked vias, optimizing the production process with minimal mask requirements.
Career Highlights
Throughout his career, Igor Koutnetsov has worked with notable companies in the technology sector, including Matrix Semiconductor, Inc. and SanDisk 3D LLC. His work has significantly impacted the development of advanced memory technologies, making him a key figure in the industry.
Collaborations
Koutnetsov has collaborated with esteemed professionals such as Roy E. Scheuerlein and Sucheta Nallamothu, contributing to the advancement of innovative memory solutions.
Conclusion
Igor Koutnetsov's contributions to flash memory technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative approaches continue to shape the future of memory storage solutions.