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For the Inventor, By the Inventor

Tokyo, Japan

Ichiro Honma

USPTO Granted Patents = 10

Average Co-Inventor Count = 1.7

ph-index = 5

Forward Citations = 76(Granted Patents)


Company Filing History:

goldMedal10 out of 35,705 
 
Nec Corporation
 patents

Years Active: 1999-2003

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10 patents (USPTO):Explore Patents
1. 6568243 - Method of evaluating capacitance value of capacitor on semiconductor substrate (2003-05-27),
2. 6342714 - HSG lower electrode structure having a neck supported by a silicon layer (2002-01-29),
3. 6329268 - Semiconductor cleaning method (2001-12-11),
4. 6313004 - Method for manufacturing semiconductor devices (2001-11-06),
5. 6221730 - Fabrication method of semiconductor device with HSG configuration (2001-04-24),
6. 5989969 - Method of producing silicon layer having surface controlled to be uneven (1999-11-23),
7. 5973355 - Nonvolatile semiconductor memory device and manufacturing method of the (1999-10-26),
8. 5972750 - Nonvolatile semiconductor memory device and manufacturing method of the (1999-10-26),
9. 5910019 - Method of producing silicon layer having surface controlled to be uneven (1999-06-08),
10. 5858837 - Method of manufacturing semiconductor memory device (1999-01-12),

Title: Ichiro Honma: Innovator in Semiconductor Technology

Introduction

Ichiro Honma is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

Honma's latest patents include a method for evaluating the capacitance value of capacitors on semiconductor substrates. This innovative method allows for the high-accuracy measurement of surface irregularities in semiconductor devices without being affected by the material properties of the semiconductor film. The process involves a plate-like element that contacts the surface of a test specimen, which is then moved by a driving mechanism. The friction coefficient between the test specimen and the contact surface is detected and converted into a parameter that helps determine surface irregularity.

Another notable patent is related to a hemispherical grained (HSG) lower electrode structure. This invention enhances yield by suppressing depletion due to insufficient impurity diffusion into the HSGs, thereby reducing capacity deterioration caused by defects on the lower electrode side. The method includes forming HSG silicon on the lower electrode and depositing a silicon film that maintains the rugged shape of the HSGs.

Career Highlights

Ichiro Honma is currently employed at NEC Corporation, where he continues to push the boundaries of semiconductor technology. His innovative approaches have led to advancements that benefit the industry and improve device performance.

Collaborations

Honma has collaborated with notable colleagues, including Hirohito Watanabe and Hiroki Shirai. Their combined expertise has contributed to the successful development of various technologies in the semiconductor field.

Conclusion

Ichiro Honma's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in the field, ensuring better performance and reliability in semiconductor devices.

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