The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2003

Filed:

Feb. 19, 1999
Applicant:
Inventor:

Ichiro Honma, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 1/902 ; G01R 2/726 ;
U.S. Cl.
CPC ...
G01N 1/902 ; G01R 2/726 ;
Abstract

Surface irregularity of a semiconductor device is measured with high accuracy, without being affected by the material properties of a semiconductor film forming the surface. Surface irregularity is evaluated when the semiconductor device is fabricated. This is accomplished using a plate-like element, which has a contact surface brought into contact with the surface of a test specimen. The plate-like element is then moved across the surface of the test specimen by a driving mechanism. The driving mechanism moves either the plate-like element or the test specimen relative to the other. A force caused by the motion is detected, and converted into a parameter equivalent to the friction coefficient between the test specimen and the contact surface. From the friction coefficient, surface irregularity is determined.


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