The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2001
Filed:
Nov. 12, 1999
Applicant:
Inventor:
Ichiro Honma, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
After HSG-Si 15,is formed on the surface of a polycrystal silicon film 15, heat treatment is conducted on it using a phosphorus diffusion apparatus in an atmosphere of a mixture gas containing POCl,, O,, and N,gases in such a situation that the O,/POCl,mole ratio is adjusted into 0.2 through 1.5, thus diffusing phosphorus into the HSG-Si 15,. With this, it is possible to suppress the corrosion of silicon by the chlorine radicals and inhibit the accelerated oxidation of silicon, thus preventing the reduction of the HSG-Si 15