Iano D'Arrigo

Title: Iano D'Arrigo: Innovator in Non-Volatile Memory Technology

Introduction

Iano D'Arrigo is a notable inventor based in Cannes, France. He has made significant contributions to the field of non-volatile memory technology, holding a total of 5 patents. His work has been instrumental in advancing memory cell designs that enhance performance and efficiency.

Latest Patents

One of Iano D'Arrigo's latest patents is for a low voltage flash EEPROM C-cell utilizing Fowler-Nordheim tunneling. This innovative design features an array of memory cell transistors that constitute asymmetric floating gate memory cells. The programming is achieved on only one side of the memory cells, allowing for improved functionality. Another significant patent involves a non-volatile memory cell and level shifter, which is formed in a semiconductor region and includes a floating gate and control gate configuration. These advancements reflect his commitment to pushing the boundaries of memory technology.

Career Highlights

Iano D'Arrigo is currently employed at Texas Instruments Corporation, where he continues to develop cutting-edge technologies. His expertise in semiconductor design and memory systems has positioned him as a key player in the industry. His contributions have not only advanced the technology but have also paved the way for future innovations in the field.

Collaborations

Throughout his career, Iano has collaborated with esteemed colleagues such as Michael C Smayling and Georges Falessi. These partnerships have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies.

Conclusion

Iano D'Arrigo's work in non-volatile memory technology exemplifies the spirit of innovation. His patents and contributions to Texas Instruments Corporation highlight his role as a leading inventor in the field. His ongoing efforts continue to shape the future of memory technology.