I-Ting Lin

Title: I-Ting Lin: Innovator in Semiconductor Technology

Introduction

I-Ting Lin is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of I-Ting Lin's latest patents is a semiconductor device package that includes a stress buffering layer. This innovative package comprises a first conductive structure, a stress buffering layer, and a second conductive structure. The first conductive structure features a substrate with at least one first electronic component embedded within it, along with a first circuit layer that is electrically connected to the first electronic component. The first circuit layer contains a conductive wiring pattern, while the stress buffering layer is strategically placed on the substrate. Notably, the conductive wiring pattern extends through the stress buffering layer, and the second conductive structure is positioned on top of both the stress buffering layer and the first circuit layer.

Career Highlights

I-Ting Lin is currently employed at Advanced Semiconductor Engineering, Inc., where he continues to push the boundaries of semiconductor technology. His expertise and innovative mindset have made him a valuable asset to the company.

Collaborations

Throughout his career, I-Ting Lin has collaborated with talented individuals such as Chien-Mei Huang and Shih-Yu Wang. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

I-Ting Lin's contributions to semiconductor technology exemplify his dedication to innovation and excellence. His patents reflect a commitment to improving the functionality and durability of semiconductor devices, making a lasting impact in the industry.