Advanced Semiconductor Engineering, Inc.

I-Ting Lin

Chien-Mei Huang

Chih-Cheng Lee

Wen Hung Huang

Hsing Kuo Tien

Shih-Yu Wang

Yuh-Shan Su

Cheng-Yuan Kung

Hung-Yi Lin

Meng-Wei Hsieh

Hsu-Chiang Shih

Sheng-Wen Yang

The present disclosure provides an electronic device and a method of manufacturing the same. The electronic device includes a first redistribution structure and a first encapsulant. The first encapsulant supports the first redistribution structure and is configured to function as a first reinforcement to provide a second redistribution structure. The redistribution structure has a plurality of conductive layers disposed over the first redistribution structure.

Electronic device and method of manufacturing the same

A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.

Semiconductor device package including stress buffering layer

Semiconductor device package with stress buffering layer and method for manufacturing the same

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Kaohsiung, Taiwan

I-Ting Lin