I-Hsin Yang

Title: I-Hsin Yang: Semiconductor and Memory Device Inventor.

Introduction.

I-Hsin Yang is an inventor based in Hsinchu, Taiwan, whose patent work focuses on semiconductor and memory-device technologies. His listed portfolio includes 2 patents, and he is associated with Taiwan Semiconductor Manufacturing Company Limited.

Latest Patents.

Yang’s listed patents address integrated-circuit structures and memory devices.

“Integrated Circuit Device, Memory Device, and Method of Manufacturing” describes an integrated-circuit device with a substrate, a bottom semiconductor device, and a top semiconductor device stacked above it. The two semiconductor devices share the same conductivity type.

“Anti-Fuse Cells with Backside Power Rails” describes a memory cell with two transistors on the frontside of a substrate and an interconnect structure on its backside. Via structures connect transistor terminals and the backside interconnect, with different cross-sectional areas specified for the vias.

Career Highlights.

Yang’s patent work reflects research and development in advanced semiconductor integration, including stacked devices, memory cells, and backside power delivery. His listed affiliation is Taiwan Semiconductor Manufacturing Company Limited.

Collaborations.

Meng-Sheng Chang and Chia-En Huang are identified as Yang’s coworkers. The supplied information does not specify their roles in the listed patents.

Conclusion.

I-Hsin Yang’s two listed patents highlight his contributions to semiconductor and memory-device design, including stacked integrated-circuit structures and anti-fuse cells with backside power rails.