The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Jan. 31, 2024
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
I-Hsin Yang, Hsinchu, TW;
Meng-Sheng Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Abstract
A device includes a memory cell including a first transistor and a second transistor disposed on a frontside of a substrate, the substrate having a first area and a second area. The memory device includes a first interconnect structure disposed on a backside of the substrate. One S/D terminal of the first transistor is coupled to one S/D terminal of the second transistor, with the other S/D terminal of the second transistor coupled to the first interconnect structure through a first via structure in the first area. The memory device includes second via structures and a third via structure both disposed in the second area and each coupled to the first interconnect structure. The first via structure and the second via structures each have a cross-sectional area that is different from that of the third via structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile