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For the Inventor, By the Inventor

Hwaseong, South Korea

Hyunggon Kim

This inventor holds 23 USPTO granted patents and 6 published patent applications and 2 EPO patents, primarily in Nonvolatile Memory Technology. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2011-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyunggon Kim. Retrieved from https://idiyas.com/inventor/hyunggon-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.9

ph-index = 3

Forward Citations = 19(Granted Patents)


Location History:

  • Suwon-si, KR (2011)
  • Hwaseong-si, KR (2018 - 2024)

Company Filing History:

goldMedal23 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2011-2025

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Areas of Expertise:
Nonvolatile Memory Device
Programming Method
Wireless Communication
Biosensor
Storage Device
Cell Counter
Page Buffer
Coarse Verification Voltage
Fine Verification Voltage
Conditional Skip
Negative Level Shifters
23 patents (USPTO):Explore Patents
1. 12451182 - Nonvolatile memory device (2025-10-21),
2. 12334155 - Non-volatile memory device, storage device including the same, and read method thereof (2025-06-17),
3. 12300334 - Non-volatile memory device and method for programming a non-volatile memory device (2025-05-13),
4. 12279849 - Method for performing wireless communication by using biosensor and electronic device therefor (2025-04-21),
5. 12205646 - Method of operating a memory device by performing a program operation using a coarse verification voltage and a fine verification voltage and a memory device and a memory system employing the same (2025-01-21),
6. 12161439 - Method for performing wireless communication by using biosensor and electronic device therefor (2024-12-10),
7. 12119063 - Memory device and operation method thereof (2024-10-15),
8. 12089408 - Non-volatile memory device including common source line tapping wire connected to common source line plate by vias on lower metal line and through-hole vias (2024-09-10),
9. 12062402 - Non-volatile memory device for performing precharge to cell string and program method thereof (2024-08-13),
10. 11901021 - Non-volatile memory device and method for programming the same using multiple program operations under different conditions (2024-02-13),
11. 11848069 - Page buffer including latches and memory device including the page buffer (2023-12-19),
12. 11823753 - Non-volatile memory device, programming method thereof, and storage device having the same (2023-11-21),
13. 11636892 - Method of counting number of cells in nonvolatile memory device and nonvolatile memory device with cell counter performing the same (2023-04-25),
14. 11626171 - Non-volatile memory device, programming method thereof, and storage device having the same (2023-04-11),
15. 11594293 - Memory device with conditional skip of verify operation during write and operating method thereof (2023-02-28),

Title: Hyunggon Kim - Innovative Inventor from Hwaseong-si, KR

Introduction: Hyunggon Kim is a talented inventor hailing from Hwaseong-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hyunggon Kim holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Hyunggon Kim has worked with leading tech companies and research institutions, spearheading projects that have revolutionized the industry.

Collaborations: Throughout his career, Hyunggon Kim has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge sharing.

Conclusion: Hyunggon Kim's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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