The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Sep. 30, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sang-Wan Nam, Hwaseong-si, KR;

Hyunggon Kim, Hwaseong-si, KR;

Bong-Kil Jung, Seoul, KR;

Younho Hong, Seoul, KR;

Juseong Hwang, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01);
Abstract

Disclosed is a memory device includes a memory block that is connected with a plurality of wordlines, a voltage generating circuit configured to output a first non-selection voltage through a plurality of driving lines, and an address decoding circuit configured to connect the plurality of driving lines with unselected wordlines of the plurality of wordlines. During a wordline setup period for the plurality of wordlines, the voltage generating circuit floats first driving lines corresponding to first unselected wordlines of the unselected wordlines from among the plurality of driving lines when the first unselected wordlines reach a first target level, and floats second driving lines corresponding to second unselected wordlines of the unselected wordlines from among the plurality of driving lines when the second unselected wordlines reach a second target level different from the first target level.


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