The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Sep. 23, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Minseok Kim, Hwaseong-si, KR;

Joonsuc Jang, Hwaseong-si, KR;

Hyunggon Kim, Hwaseong-si, KR;

Seonyong Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/24 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 11/5628 (2013.01); G11C 16/24 (2013.01); G11C 16/3431 (2013.01);
Abstract

A method of operating a memory device, the method including: performing a first program operation to form a plurality of first threshold voltage distributions; and performing a second program operation by using a coarse verification voltage and a fine verification voltage based on offset information to form a plurality of second threshold voltage distributions respectively corresponding to a plurality of program states from the plurality of first threshold voltage distributions, wherein the offset information includes a plurality of offsets that vary according to characteristics of the second threshold voltage distributions.


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