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For the Inventor, By the Inventor

Seoul, South Korea

Hyun-Sung Shin

USPTO Granted Patents = 10 

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 15(Granted Patents)


Company Filing History:

goldMedal10 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2015-2021

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10 patents (USPTO):Explore Patents
1. 11194579 - Memory device supporting skip calculation mode and method of operating the same (2021-12-07),
2. 11114139 - Stacked memory device, a system including the same and an associated method (2021-09-07),
3. 10957380 - Memory device scrambling address (2021-03-23),
4. 10923165 - Stacked memory device, a system including the same and an associated method (2021-02-16),
5. 10672479 - Nonvolatile memory devices, memory systems and methods of operating nonvolatile memory devices for processing user data (2020-06-02),
6. 10553260 - Stacked memory device, a system including the same and an associated method (2020-02-04),
7. 9332088 - Systems and methods for updating computing programs (2016-05-03),
8. 9298612 - Semiconductor memory device and computer system including the same (2016-03-29),
9. 9148321 - Interface circuit, interface system and method of interfacing signals transferred between devices (2015-09-29),
10. 8976615 - Semiconductor memory device capable of performing refresh operation without auto refresh command (2015-03-10),

Title: The Innovative Contributions of Hyun-Sung Shin

Introduction

Hyun-Sung Shin is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory devices, holding a total of 10 patents. His work focuses on enhancing the efficiency and functionality of memory technologies, which are crucial in today's digital landscape.

Latest Patents

One of his latest patents is a memory device supporting a skip calculation mode and the method of operating the same. This innovative memory device includes a memory cell array formed in a semiconductor die, which consists of multiple memory cells for data storage and a calculation circuit. The calculation circuit performs operations based on broadcast data and internal data, omitting calculations for invalid data while focusing on valid data using index data. This approach significantly reduces power consumption by avoiding unnecessary calculations and read operations for invalid data.

Another notable patent is for a stacked memory device, which comprises a logic semiconductor die and several memory semiconductor dies stacked together. Each memory semiconductor die includes a memory integrated circuit, and some are equipped with a calculation unit. The design features through-silicon vias that electrically connect the logic die and the memory dies, allowing for efficient data processing and calculation based on broadcast and internal data.

Career Highlights

Hyun-Sung Shin is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has positioned him as a key player in the development of advanced memory technologies. His innovative patents reflect his commitment to improving memory device performance and efficiency.

Collaborations

Throughout his career, Hyun-Sung Shin has collaborated with talented colleagues, including Ik-Joon Choi and So-Young Kim. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Hyun-Sung Shin's contributions to the field of memory devices are noteworthy and impactful. His innovative patents demonstrate his expertise and commitment to advancing technology. As a leading inventor at Samsung Electronics, he continues to shape the future of memory technology.

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