Yongin-si, South Korea

Hyun-Geun Byun



Average Co-Inventor Count = 4.0

ph-index = 5

Forward Citations = 64(Granted Patents)


Location History:

  • Kyungki-do, KR (1998)
  • Sungnam, KR (2003)
  • Gyeonggi-do, KR (2006)
  • Yongin-si, KR (2008 - 2011)

Company Filing History:


Years Active: 1998-2011

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8 patents (USPTO):Explore Patents

Title: Inventor Profile: Hyun-Geun Byun

Introduction: Hyun-Geun Byun is a notable inventor based in Yongin-si, South Korea, recognized for his significant contributions to the field of memory devices. With a total of eight patents to his name, Byun is currently affiliated with Samsung Electronics Co., Ltd., where he continues his innovative work in technology.

Latest Patents: Among his recent inventions are two impactful patents: the "Magnetic memory device and method of fabricating the same" and "Phase change memory devices employing cell diodes and methods of fabricating the same." The former patent describes a magnetic memory device featuring a common line with multiple diodes connected in parallel, showcasing advanced structural design for efficiency and performance. The latter patent focuses on phase change memory devices incorporating a semiconductor substrate and multiple parallel word lines, enhancing memory functionality through innovative stacking and insulating methods.

Career Highlights: Hyun-Geun Byun has made significant strides in the memory technology sector, demonstrating proficiency in designing advanced memory devices that are crucial for modern electronics. His work not only exemplifies technical expertise but also reflects the ongoing evolution in data storage solutions.

Collaborations: Throughout his career at Samsung Electronics Co., Ltd., Byun has collaborated with esteemed colleagues such as Choong-Keun Kwak and Woo-Yeong Cho. Together, they have contributed to a dynamic research environment that fosters innovation and excellence in memory technology.

Conclusion: With eight patents and a strong affiliation with Samsung Electronics Co., Ltd., Hyun-Geun Byun stands out as a prominent inventor in the memory technology landscape. His latest inventions demonstrate a commitment to pushing the boundaries of what's possible, contributing significantly to advancements in electronic data storage. As technology continues to evolve, Byun’s work will undoubtedly play a pivotal role in shaping the future of memory devices.

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