Hyo-Seok Choi

Title: Hyo-Seok Choi: Semiconductor Device Inventor

Introduction

Hyo-Seok Choi is an inventor based in Suwon, South Korea, whose patent work focuses on semiconductor device structures and manufacturing methods. Choi is associated with Samsung Electronics Co., Ltd. and is credited with 6 patents.

Latest Patents

Among Choi’s latest patents is “Semiconductor Devices with Shaped Portions of Elevated Source/Drain Regions.” The disclosed method forms an opening that exposes an elevated source/drain region, reduces the opening’s size, and performs a pre-amorphization implant through it. The resulting amorphized portion is then used to form a metal silicide.

Another recent patent is “Semiconductor Devices Including Contact Structures That Partially Overlap Silicide Layers.” It describes a device with isolated active substrate portions, an epitaxial layer, and a metal silicide layer. A contact structure overlaps only part of the silicide layer, and the patent also covers related manufacturing methods.

Career Highlights

Choi’s listed patent portfolio reflects work on semiconductor fabrication and device design, particularly source/drain regions, silicide formation, and contact structures. These inventions address specific structural and process considerations in semiconductor manufacturing.

Collaborations

Choi’s listed coworkers include Chul-Sung Kim and Dae-Yong Kim. The available information identifies Samsung Electronics Co., Ltd. as Choi’s company.

Conclusion

Hyo-Seok Choi’s patent work at Samsung Electronics centers on semiconductor devices and their fabrication, including innovations in silicide layers, source/drain regions, and contact structures.