Samsung Electronics Co., Ltd.

Hyo-Seok Choi

Chul-Sung Kim

Sang-Woo Lee

Sang-Bom Kang

Dae-Yong Kim

Jeong-Ik Kim

Chung-Hwan Shin

Je-Hyung Ryu

Shigenobu Maeda

Sang-Jin Hyun

Young-Moon Choi

Do-Sun Lee

Chang-Woo Sohn

Young-Chul Jang

Sun-Yong Lee

Dong-Heui Jang

A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.

Semiconductor devices with shaped portions of elevated source/drain regions

Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes an isolation layer defining active portions of the substrate that are spaced apart from each other in a direction. The semiconductor device includes an epitaxial layer on the active portions. The semiconductor device includes a metal silicide layer on the epitaxial layer. Moreover, the semiconductor device includes a contact structure that only partially overlaps the metal silicide layer on the epitaxial layer. Related methods of forming semiconductor devices are also provided.

Semiconductor devices including contact structures that partially overlap silicide layers

Methods of forming semiconductor devices with metal silicide using pre-amorphization implants

A method for manufacturing a semiconductor device comprises the steps of extracting an optimal working condition by accumulatively averaging accumulated working conditions of lots previously performed in an expectation process to be currently performed in the manufacturing equipment, extracting a correction condition by extracting information for an alignment state of a lower layer performed by the expectation process, and setting the working condition by adding the correction condition to the optimal working condition.

Method for manufacturing semiconductor device

Growing community of inventors

Suwon-si, South Korea

Hyo-Seok Choi