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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9240323 B1

PDFFull Text
Date of Patent:
Jan. 19, 2016

Filed:

Mar. 07, 2013

Methods of forming semiconductor devices with metal silicide using pre-amorphization implants

Applicants:

Chung-hwan Shin, Seoul, KR;

Sang-bom Kang, Seoul, KR;

Dae-yong Kim, Yongin-si, KR;

Jeong-ik Kim, Seoul, KR;

Chul-sung Kim, Seongnam-si, KR;

Je-hyung Ryu, Suwon-si, KR;

Sang-woo Lee, Seoul, KR;

Hyo-seok Choi, Suwon-si, KR;

Inventors:

Chung-Hwan Shin, Seoul, KR;

Sang-Bom Kang, Seoul, KR;

Dae-Yong Kim, Yongin-si, KR;

Jeong-Ik Kim, Seoul, KR;

Chul-Sung Kim, Seongnam-si, KR;

Je-Hyung Ryu, Suwon-si, KR;

Sang-Woo Lee, Seoul, KR;

Hyo-Seok Choi, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel Sibley & Sajovec, P.A.

Primary Examiner:

Charles Garber

Assistant Examiner:

Brigitte Paterson

Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 21/285 (2006.01); H01L 23/485 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28 (2013.01); H01L 21/26506 (2013.01); H01L 21/28518 (2013.01); H01L 21/76814 (2013.01); H01L 23/485 (2013.01); H01L 29/165 (2013.01); H01L 29/66636 (2013.01); H01L 29/78 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.

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