Hsinchu, Taiwan

Hung Shen Chu

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Panjit International Inc.. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hung Shen Chu. Retrieved from https://idiyas.com/inventor/hung-shen-chu-eith4iqk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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2 patents (USPTO):Explore Patents

Title: Innovations of Inventor Hung Shen Chu

Introduction

Hung Shen Chu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor devices, holding a total of 2 patents. His work focuses on advanced technologies that enhance the performance and efficiency of electronic components.

Latest Patents

Hung Shen Chu's latest patents include a Heterostructure field effect transistor (HFET) device that features a controllable dual carrier flow current channel. This semiconductor device comprises a substrate, a nucleation layer, a buffer layer, a superlattice stack, a cap layer, a first transistor area, and a second transistor area. The first superlattice stacked layers create a two-dimensional electron gas carrier transport, generating a first current channels group. Meanwhile, the second superlattice stacked layers form a two-dimensional hole gas carrier transport at different depths, resulting in a second current channels group. The first transistor area is designed to control the first current channels group, while the second transistor area manages the second current channels group.

Another significant patent involves the manufacturing method of forming a semiconductor device. This method outlines the steps of providing a native substrate, sequentially forming various layers including a thick GaN substrate layer and an AlGaN barrier layer, and implanting Mg ions to create a current blocking layer. The process culminates in the formation of source, gate, and drain contacts, showcasing the intricate techniques involved in semiconductor fabrication.

Career Highlights

Hung Shen Chu is currently associated with Panjit International Inc., where he continues to innovate and develop cutting-edge semiconductor technologies. His expertise in the field has positioned him as a key contributor to advancements in electronic devices.

Collaborations

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Conclusion

Hung Shen Chu's contributions to semiconductor technology through his innovative patents highlight his role as a leading inventor in the industry. His work not only advances the field but also paves the way for future developments in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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