Manufacturing method of forming semiconductor device and semiconductor device

Abstract

A method of forming a semiconductor device and the structure of the semiconductor device are provided. The manufacturing method includes the following steps of: providing a native substrate; sequentially forming a first nucleation layer, a thick GaN substrate layer, a second nucleation layer, an AlGaN barrier layer, a GaN channel layer and a leakage current stop layer; forming an aperture area through the leakage current stop layer; forming a GaN buffer layer; implanting Mg ions to the GaN buffer layer to form a current blocking layer; forming a GaN drift layer; forming a metallic interlayer on the GaN drift layer and transferring the GaN drift layer on a transferred substrate through the metallic interlayer; removing a semiconductor stack; forming a source contact, a gate contact and a drain contact.