The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Sep. 28, 2022
Panjit International Inc., Kaohsiung, TW;
Hung Shen Chu, Hsinchu, TW;
PANJIT INTERNATIONAL INC., Kaohsiung, TW;
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a nucleation layer, a buffer layer, a superlattice stack, a cap layer, a first transistor area and a second transistor area. The first superlattice stacked layers form a two dimensional electron gas carrier transport to generate a first current channels group and the second superlattice stacked layers forming a two dimensional hole gas carrier transport at different depths to generate a second current channels group. The first transistor area has a first depth contacted to the first superlattice stacked layers. The second transistor area has a second depth contacted to the second superlattice stacked layers. The first transistor area controls the first current channels group and the second current channels group, and the second transistor area controls the second current channels group.