Hung-Jung Yan

Title: Innovations of Hung-Jung Yan in Semiconductor Technology

Introduction

Hung-Jung Yan is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in memory structures. His innovative approach has led to the development of a unique patent that enhances semiconductor memory formation.

Latest Patents

Hung-Jung Yan holds a patent for a semiconductor memory structure and the method for forming the same. This patent describes a method that includes forming a plurality of conductive wire structures over a semiconductor substrate. It also involves creating spacer structures along the sidewalls of these conductive wire structures. Each spacer structure includes a first spacer, and the method further includes forming dielectric strips across the conductive wire structures. Additionally, conductive strips are formed over the conductive wire structures and dielectric strips, followed by a patterning process to create conductive pads. The first spacer of each spacer structure is then removed to form gaps, enhancing the overall memory structure.

Career Highlights

Hung-Jung Yan is associated with Winbond Electronics Corporation, a leading company in the semiconductor industry. His work at Winbond has allowed him to focus on advancing semiconductor technologies and contributing to innovative solutions in memory structures.

Collaborations

He has collaborated with notable coworkers, including Ling-Chun Tseng and Chun-Chieh Wang, who share a commitment to advancing semiconductor technology.

Conclusion

Hung-Jung Yan's contributions to semiconductor memory technology through his innovative patent demonstrate his expertise and commitment to the field. His work continues to influence advancements in semiconductor structures and methods.