Winbond Electronics Corporation

Hung-Jung Yan

Tzu-Ming Ou Yang

Chun-Chieh Wang

Ling-Chun Tseng

A method for forming a semiconductor memory structure includes forming a plurality of conductive wire structures over a semiconductor substrate, and forming a plurality of spacer structures along the sidewalls of the conductive wire structures. Each of the spacer structures includes a first spacer. The method also includes forming a plurality of dielectric strips across the conductive wire structures, forming a plurality of conductive strips over the conductive wire structures and the dielectric strips, performing a patterning process on the conductive strips to form a plurality of conductive pads, and removing the first spacer of each of the spacer structures to form a gap in each of the spacer structures.

Growing community of inventors

Tainan, Taiwan

Hung-Jung Yan